New Nanotechnology Process May Improve RAM Memories

In the near future we will turn our computers on and they will be ready to work almost instantaneously; no longer will we have to wait a while for the operating system and certain programs to load into the RAM. At the moment, SRAM and DRAM do not allow this, as they are quick, but they are deleted when the computer is switched off (that is, they are “volatile”); Flash memories, which we use for digital cameras, are not deleted, but they are slow; MRAM, which is still being developed, is fast and non-volatile, but has a relatively low storage capacity. A team of scientists from the UAB Department of Physics, in collaboration with colleagues from the Argonne National Laboratory (USA) and the Spintec laboratory (Grenoble, France), have discovered a magnetic phenomenon that could be useful in the quest for the ideal type of memory: an MRAM with large storage capacity.

Site – http://nanotechwire.com

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